Location
1224B1
Contact
The system has two MFC controlled gas channels capable of annealing substrates in N2, O2, or forming gas (H2:Ar) ambient. The system is a cold wall, quartz chamber, which is heated with top and bottom arrays of high intensity halogen lamps using a closed-loop temperature control using either a pyrometer (550C to 1150C) or a thermocouple (100C to 700C). The anneal chamber consists of a quartz tray compatible with pieces (on a Si carrier wafer), 4” and 6” wafers.