The PlasmaTherm Versaline ICP Etch system is a high density plasma (HDP) etch system. The DSE (Deep Silicon Etch) technology is based on the well-known time division multiplex (TDM) etch process. The TDM process (also known as the Bosch process) consists of alternating cycles of etching and protective polymer deposition to achieve high aspect ratios. The system can accommodate sample sizes ranging from a single 6-inch (150 mm) wafer to small parts and pieces (mounted on a 6-inch carrier wafer).
A mechanical ceramic clamp secures the substrate within the process chamber during the DSE process. Cooling of the platen is provided by a heat exchanger with a cooling loop that is independent of the system. Helium gas is used for aiding backside cooling of the substrate. Gases configured with this system include SF6 (Sulfur Hexafluoride), C4F8 (Octofluorocyclobutance), O2 (Oxygen), and Ar (Argon). An aluminum load lock allows manual loading of the substrate.
| Process Parameter | Limits |
| Process pressure | Max = 100 mT |
| Backside He cooling pressure | Max = 10 Torr |
| ICP power | Max = 3500 W |
| Bias voltage | Max = 1500 V |
| Electrode temp | Max = 40 C; min = -40 C |
| Lid temp | 180 C |
| Liner temp | 180 C |
| Spool temp | 180 C |
| C4F8 flow rate | 420 sccm |
| SF6 flow rate | 653.4 sccm |
| Ar flow rate | 48.5 sccm |
| O2 flow rate | 48.25 sccm |