![EVG 810](/sites/g/files/dgvnsk5151/files/styles/equipment/public/2019-03/EVG%20810.jpg?itok=FD1ldCUY)
Location
1274
Contact
The Plasma Activation Module enables surface plasma activation of the wafer prior to bonding (fusion/molecular and intermediate layer bonding). This method allows the final annealing temperature to be decreased from > 1000º C (in the case of non-activated surfaces) down to < 400º C. The available process gases are nitrogen and oxygen.
Training Video