HDPCVD
Location
1224B3
Contact

Plasma-Therm’s VERSALINE HDPCVD product is a new approach to achieving highly dense and conformal films at low substrate temperatures. The system utilizes a high-density ICP plasma with a temperature-controlled and biased substrate. Uniform gas injection at the substrate level maximizes film quality.  This system utilizes SiH4, N2, O2, CH4 and Ar process gasses to grow a large variety of films including:

  • Silicon dioxide
  • Silicon nitride,
  • Silicon carbide
  • Silicon oxy-nitride
  • Amorphous silicon