The AS-One is a high temperature Rapid Thermal Process (RTP) system. It is capable of anneals as high as 1500C with a ramp rate up to 200C and cooling rates up to 100C for 4” silicon substrates. The system is pyrometer controlled and calibrated to either a bare Si wafer or a specific susceptor type. The system uses turbo pumping to achieve pump down pressures as low as 10E-6 Torr. The system has MFC controlled gas channels for annealing in controlled ambient (Ar, O2, N2, 3%H2:N2 and vacuum). The process chamber is a cold wall, stainless steel chamber. The clam shell style design and the 4” wafer process chamber provides full access to the bedplate and easy loading and unloading of the substrates.