Location
1224B2
Contact
This system utilizes HBr, Cl2, BCl3, H2, CF4, CHF3, Ar, O2, CH4 and SF6 process gasses to accommodate a large variety of dry etch process capabilities. RIE/ICP Etcher with capabilities of etching Si, oxides, nitrides, metals and polymers. System can accommodate sample sizes ranging from full 6" wafers to odd size parts and pieces. Samples other than 6" wafers are mounted on a 6" carrier wafer.