Center for Nano-MicroManufacturing

The IntlVac Nanoquest IBE/CAIBE/RIBE system utilizes a remote broad beam ion/plasma source to remove substrate material by physical inert gas and/or chemical reactive gas means.  Ion beam etching (IBE) is considered a universal etchant process method. For example, IBE can etch noble and refractory metals, alloys, and magnetic materials without any harsh chemical reactants.  Gasses available for use in Reactive Ion Beam Etch (RIBE) mode include Ar, O2, SF6, CF4, CHF3 and N2.  Gasses available for use in Chemically Assisted Ion Beam Etch (CAIBE) mode include SF6, CF4, CHF3 and O2.  Motorized control of stage tilt provides ion incident angle with 0.1 ° increments up to 135 degrees with reference to the stage platen normal to the ion source axis.  The system is fitted with a manual transfer load lock assembly which accommodates sample sizes ranging from small parts to full six inch wafers. The wafer is loaded onto a carrier and thermally bonded to the carrier before loading.

The YES-G500 uses capacitive plasma generation. Plasma is generated between pairs of planar electrodes that are electrically “active” or are electrically grounded. Active electrodes are at the potential of the RF power that is supplied to the tool.

A variety of available plasma exposure modes such as downstream plasma, active plasma, RIE plasma, active ion trap plasma and grounded ion trap plasma can be utilized via the shelf system in the YES G500 plasma chamber.  The shelf sequence can be adjusted to enable control of the substrate potential and the energy level of the electrons and ions that come in contact with the substrate.

Advanced Vacuum’s APEX SLR provides etching capabilities over a variety of materials and substrates. This system utilizes Cl2, BCl3, Ar and O2 process gasses to accommodate a large variety of dry etch process capabilities. Historically the tool has been used to etch III-V materials, and various oxides. System can accommodate sample sizes ranging from full 6" wafers to odd size parts and pieces.  Samples other than 6" wafers are mounted on a 6" carrier wafer.

Metal etches and material compatibility need to be discussed with staff. Exposed Gold and other potential sources of mobile ion contamination are not allowed in the chamber.

This system utilizes HBr, Cl2, BCl3, H2, CF4, CHF3, Ar, O2, CH4 and SF6 process gasses to accommodate a large variety of dry etch process capabilities.  RIE/ICP Etcher with capabilities of etching Si, oxides, nitrides, metals and polymers.  System can accommodate sample sizes ranging from full 6" wafers to odd size parts and pieces.  Samples other than 6" wafers are mounted on a 6" carrier wafer.

The PlasmaTherm Versaline ICP Etch system is a high density plasma (HDP) etch system. The DSE (Deep Silicon Etch) technology is based on the well-known time division multiplex (TDM) etch process. The TDM process (also known as the Bosch process) consists of alternating cycles of etching and protective polymer deposition to achieve high aspect ratios. The system can accommodate sample sizes ranging from a single 6-inch (150 mm) wafer to small parts and pieces (mounted on a 6-inch carrier wafer).

A mechanical ceramic clamp secures the substrate within the process chamber during the DSE process. Cooling of the platen is provided by a heat exchanger with a cooling loop that is independent of the system. Helium gas is used for aiding backside cooling of the substrate. Gases configured with this system include SF6 (Sulfur Hexafluoride), C4F8 (Octofluorocyclobutance), O2 (Oxygen), and Ar (Argon). An aluminum load lock allows manual loading of the substrate.

The Vision 320 is a manual load, parallel plate reactive ion etcher (RIE) configured for fluorine based etching.  Etch gases connected to the system are CF4, CHF3, SF6, Ar and O2.  Common materials etched in fluorine chemistries include silicon oxide (SiO2), silicon nitride (Si3N4) etching of silicon and fluorine etchable metals.  The platen is a 10” graphite plate capable of holding sample pieces up to a 10” substrate.  

 Isotropic etching of silicon using xenon difluoride is an ideal solution for releasing MEMS devices. XeF2 shows high selectivity to silicon over almost all standard semiconductor materials including photoresist, silicon dioxide, silicon nitride and aluminum. Being a vapor phase etchant, XeF2 avoids many of the problems typically associated with wet or plasma etch processes.